IIRFB4710

N-Channel MOSFET Transistor

IIRFP4710

N-ChannelMOSFETTransistor

•DESCRITION •HighFrequencyDC-DCConverters •UninterruptiblePowerSupply •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤14mΩ •Enhancementmode: Vth=3.5to5.5V(VDS=VGS,ID=250μA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performa

IRFB4710

PowerMOSFET(Vdss=100v,Rds(on)max=0.014ohm,Id=75A)

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●MotorControl ●Uninterru

IRFB4710

N-ChannelMOSFETTransistor

IRFB4710PBF

HEXFET짰PowerMOSFET

IRFB4710PBF

HighfrequencyDC-DCconverters

IRFP4710

PowerMOSFET(Vdss=100V,Rds(on)max=0.014ohm,Id=72A)

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●MotorCont

IRFP4710

N-ChannelMOSFETTransistor

•DESCRITION •HighFrequencyDC-DCConverters •UninterruptiblePowerSupply •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤14mΩ •Enhancementmode: Vth=3.5to5.5V(VDS=VGS,ID=250μA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performa

IRFP4710

HEXFET®PowerMOSFET

Applications HighfrequencyDC-DCconverters MotorControl UninterruptiblePowerSupplies

IRFP4710PBF

HighfrequencyDC-DCconverters