Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)

Applications • High frequency DC-DC converters Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

文件：133.62 Kbytes 页数：11 Pages

IRF

N-Channel MOSFET Transistor

文件：339.21 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Applications • High frequency DC-DC converters • Plasma Display Panel • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalan

文件：275.56 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Applications • High frequency DC-DC converters • Plasma Display Panel • Lead-Free Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalan

文件：715.75 Kbytes 页数：11 Pages

IRF

HEXFET짰 Power MOSFET

文件：589.27 Kbytes 页数：12 Pages

Infineon

英飞凌

采用 TO-220 封装的 200V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 经过充分验证的雪崩电压和电流\n• 低栅漏电荷，可降低开关损耗\n• 经过充分验证的的电容，包括有效的Coss以简化设计;

Infineon

英飞凌