N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤4.1mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operati

文件：338.68 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Worldwide Best RDS(on) in TO-220 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance a

文件：385 Kbytes 页数：11 Pages

IRF

N-Channel MOSFET Transistor

文件：338.79 Kbytes 页数：2 Pages

ISC

无锡固电

High Efficiency Synchronous Rectification in SMPS

文件：1.44902 Mbytes 页数：11 Pages

KERSEMI