N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.0265Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable opera

文件：338.75 Kbytes 页数：2 Pages

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N-Channel MOSFET Transistor

文件：335.8 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • It is intended for general purpose switching applications • FEATURES • Low drain-source on-resistance: RDS(on) ≤ 44mΩ (max) • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable oper

文件：338.49 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：299.56 Kbytes 页数：2 Pages

ISC

无锡固电