N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.5mΩ • Enhancement mode: • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.87 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.5mΩ • Enhancement mode: • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.87 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Pow

文件：526.79 Kbytes 页数：10 Pages

IRF

HEXFET

Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability •Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Powe

文件：457.13 Kbytes 页数：8 Pages

IRF