丝印：H30R1353；Package：PG-TO247-3；Reverse conducting IGBT with monolithic body diode

Features: •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswit

文件：2.05144 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：H30R1353；Package：PG-TO247-3；Reverse conducting IGBT with monolithic body diode

Features: • Offers new higher breakdown voltage to 1350V for improved reliability • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TRENCHSTOPTM technology offering: - very tight parameter distribution - high ruggedness, temperature stable behavi

文件：1.72064 Mbytes 页数：16 Pages

Infineon

英飞凌

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)= 1.85V@IC= 30A · Low Switching Losses · High Ruggedness, Temperature Stable Behavior APPLICATIONS · Inverterized Microwave Ovens · Inductive Cooking · Resonant Converters · Soft Switching Applications

文件：362.14 Kbytes 页数：3 Pages

ISC

无锡固电

分立式IGBT

The 3rd generation of reverse conducting 1350 V, 30 A TRENCHSTOP™ RC-IGBT3 with monolithically integrated reverse conducting diode in a TO247 package has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal pe • Best-in-class conduction properties in VCEsatand Vf\n• Lowest switching losses, highest efficiency\n• Excellent thermal behavior\n• Tj(max)= 175°C\n• Soft current turn-off waveforms for low EMI\n• Higher breakthrough voltage, VBR(min)of 1350 V\n\n优势:\n• Lowest power dissipation\n• Better thermal m;

Infineon

英飞凌

Reverse conducting IGBT with monolithic body diode

Features: • Offers new higher breakdown voltage to 1350V for improved reliability • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TRENCHSTOPTM technology offering: - very tight parameter distribution - high ruggedness, temperature stable behavi

文件：1.72064 Mbytes 页数：16 Pages

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1350V 60A 349W TO247-3

Infineon

英飞凌