IHW30N135R3分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

IHW30N135R3属于分立半导体产品的晶体管-UGBT、MOSFET-单。由英飞凌科技股份公司制造生产的IHW30N135R3晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。

Features:

• Offers new higher breakdown voltage to 1350V for improved

reliability

• Powerful monolithic body diode with low forward voltage

designed for soft commutation only

• TRENCHSTOPTM technology offering:

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- low VCEsat

- easy parallel switching capability due to positive

temperature coefficient in VCEsat

• Low EMI

• Qualified according to JESD-022 for target applications

• Pb-free lead plating; RoHS compliant

• Halogen free (according to IEC 61249-2-21)

• Complete product spectrum and PSpice Models:

http://www.infineon.com/igbt/

Applications:

• Inductive cooking

• Inverterized microwave ovens

• Resonant converters

• Soft switching applications