Features:

• Powerful monolithic Body Diode with very low forward voltage

• Body diode clamps negative voltages

• Trench and Fieldstop technology for 1200 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

• NPT technology offers easy parallel switching capability due to

positive temperature coefficient in VCE(sat)

• Low EMI

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:

• Inductive Cooking

• Soft Switching Applications

IHW25N120R2属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。英飞凌科技公司制造生产的IHW25N120R2晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。