丝印：G30H603；Package：PG-TO220-3；High speed switching series third generation

TRENCHSTOP technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating, halogen-free mould compound, RoHS compliant

文件：2.10965 Mbytes 页数：14 Pages

Infineon

英飞凌

Trench and Fieldstop IGBT

DESCRIPTION · Very lowturn-offenergy · Low VCEsat · Maximum junction temperature175℃ · Low EMI APPLICATIONS · Converter swith high switching frequency · Welding converters · Uninterruptible powersupplies

文件：269.93 Kbytes 页数：2 Pages

ISC

无锡固电

LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY

Low Loss IGBT in Trench and Fieldstop technology • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterruptible Power Supply • Trench and Fieldstop technology for 600 V application

文件：378.54 Kbytes 页数：12 Pages

Infineon

英飞凌

Low Loss IGBT in TrenchStop and Fieldstop technology

文件：446.85 Kbytes 页数：13 Pages

Infineon

英飞凌

Low Loss IGBT in TrenchStop and Fieldstop technology

文件：446.85 Kbytes 页数：13 Pages

Infineon

英飞凌

分立式IGBT

High speed 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO220 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. • Low switching losses for high efficiency\n• Excellent Vce(sat)behavior thanks to the famous Infineon TRENCHSTOP™ technology\n• Fast switching behavior with low EMI emissions\n• Optimized diode for target applications, meaning further improvement in switching losses\n• Low gate resistor selection p;

Infineon

英飞凌

LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY

Infineon

英飞凌

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 60A 187W TO220-3

Infineon

英飞凌