分立式IGBT

Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn o ·Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz\n ·Low switching losses for high efficiency\n ·Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology\n ·Fast switching behavior with low EMI emissions\n ·Optimized ;

Infineon

英飞凌

High speed switching series third generation

文件：1.62111 Mbytes 页数：15 Pages

Infineon

英飞凌

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 18A 43W TO220-3

Infineon

英飞凌

600V high speed switching series third generation

文件：1.45972 Mbytes 页数：14 Pages

Infineon

英飞凌

600V high speed switching series third generation

文件：1.63937 Mbytes 页数：14 Pages

Infineon

英飞凌

High speed switching series third generation

TRENCHSTOP technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating, halogen-free mould compound, RoHS compliant

文件：2.10965 Mbytes 页数：14 Pages

Infineon

英飞凌