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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IM840	文件：414.09 Kbytes Page：7 Pages	Directpintopindrop-inreplacementforindustry-standardpackages	ILSIILSI America LLC 艾博康深圳艾博康商务咨询有限公司	ILSI
IM840B	文件：414.09 Kbytes Page：7 Pages	MemsOscillator,HighPerformanceDifferentialOscillator,LVPECLandLVDS1.000MHzto220.000MHz	MMD MMD Components	MMD
IM840B	文件：414.09 Kbytes Page：7 Pages	Directpintopindrop-inreplacementforindustry-standardpackages	ILSIILSI America LLC 艾博康深圳艾博康商务咨询有限公司	ILSI
IM840C	文件：414.09 Kbytes Page：7 Pages	Directpintopindrop-inreplacementforindustry-standardpackages	ILSIILSI America LLC 艾博康深圳艾博康商务咨询有限公司	ILSI
IM840C	文件：414.09 Kbytes Page：7 Pages	MemsOscillator,HighPerformanceDifferentialOscillator,LVPECLandLVDS1.000MHzto220.000MHz	MMD MMD Components	MMD
IRC840	文件：220.27 Kbytes Page：8 Pages	PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A) Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheHEXSensedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltw	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRC840PBF	文件：1.25191 Mbytes Page：9 Pages	HEXFETPowerMOSFET Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheHEXSensedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltw	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF840	文件：206.7 Kbytes Page：2 Pages	TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap	DCCOMDc Components 直流元件直流元件有限公司	DCCOM
IRF840	文件：152.01 Kbytes Page：1 Pages	PowerMOSFET(VDSS=500V,RDS(on)=0.85ohm,ID=8.0A) PowerMOSFET VDSS=500V,RDS(on)=0.85ohm,ID=8.0A NChannel	TEL TRANSYS Electronics Limited	TEL
IRF840	文件：170.17 Kbytes Page：6 Pages	PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A) 500Volt,0.85OhmHEXFETTO-220ABPlasticPackage TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancelineofpowerMOSFETtransistors.TheefficientgemmetryanduniqueprocessingofthislatestStateoftheArtdesignachieves:verylowon-stateresistancecombinedwithhight	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF840	文件：544.88 Kbytes Page：8 Pages	TRANSISTORSN-CHANNEL REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSN-CHANNEL	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF840	文件：150.37 Kbytes Page：5 Pages	N-ChannelPowerMOSFETs,8A,450V/500V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedsepeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers.	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IRF840	文件：146.97 Kbytes Page：2 Pages	N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR	MotorolaMotorola, Inc 摩托罗拉	Motorola
IRF840	文件：56.91 Kbytes Page：7 Pages	8A,500V,0.850Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitchin	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
IRF840	文件：272.29 Kbytes Page：5 Pages	N-CHANNELPOWERMOSFETS FEATURES •LowerRDS(ON) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperationarea •Improvedhightemperaturereliability	SamsungSamsung Group 三星三星半导体	Samsung
IRF840	文件：911.1 Kbytes Page：10 Pages	500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IRF840	文件：60.22 Kbytes Page：7 Pages	PowerMOStransistorAvalancheenergyrated DESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitched modepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.TheIRF840issuppliedin	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
IRF840	文件：93.43 Kbytes Page：8 Pages	N-CHANNEL500V-0.75ohm-8A-TO-220PowerMESH]MOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
IRF840	文件：108.92 Kbytes Page：3 Pages	NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinoff-lineswitchedmodepower supplies,T.V.andcomputermonitorpowersupplies. DC-DCconverters,motorcontrolcircuitsandgeneralpurpose switchingapplications CompliancetoRoHS.	COMSET Comset Semiconductor	COMSET
IRF840	文件：5.59401 Mbytes Page：30 Pages	Drives1x70WHIDlamp Overview TheIRPLHID2Areferencedesignkitconsistsofacompleteballastsolutionfora70WHIDlamp.ThedesigncontainsanEMIfilter,lowvoltagepowersupply,activepowerfactorcorrectionandaballastcontrolcircuitusingtheIRS2573D.Thisdemoboardisintendedtohelpwiththeevalua	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市金嘉锐电子有限公司	IFR840	MOT	24+	ORIGINAL	16000	原装优势绝对有货	询价
贸泽芯城（深圳）电子科技有限公司	IFR9024		21+ROHS	TO-251TO-252	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市河锋鑫科技有限公司	IFR9024	IR	22+	SMD	6000	终端可免费供样,支持BOM配单	询价
深圳市创新迹电子有限公司	IFR9024	IR	23+	SMD	8000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	IFR9024	IR	23+	SMD	8000	只做原装现货	询价
深圳市毅创腾电子科技有限公司	IFR9110	IR		TO-252	1000	原装长期供货!	询价
深圳市华斯顿科技有限公司	IFR9110	IR	22+23+	TO-252	41303	绝对原装正品全新进口深圳现货	询价
深圳市粤骏腾电子科技有限公司	IFR9110	IR	21+	TO-252	1000	原装现货	询价
深圳市能创芯电子科技有限公司	IFR9110	IR	23+	TO-252	3000	原装正品假一罚百!可开增票!	询价
深圳市瑞卓芯科技有限公司	IFR9110	IR	22+	TO-252	9000	原装正品	询价

更多IFR840供应商更新时间2024-6-18 15:17:00

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