Direct pin to pin drop-in replacement for industry-standard packages

文件：414.09 Kbytes 页数：7 Pages

ILSI

Mems Oscillator, High Performance Differential Oscillator, LVPECL and LVDS 1.000 MHz to 220.000MHz

文件：414.09 Kbytes 页数：7 Pages

MMD

包装：散装 功能：- 类别：晶体，振荡器，谐振器 振荡器 描述：PLASTIC SMD MEMS OSCILLATOR

ILSI

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The HEXSense device provides an accurate fraction of the drain current through the additional tw

文件：220.27 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The HEXSense device provides an accurate fraction of the drain current through the additional tw

文件：1.25191 Mbytes 页数：9 Pages

IRF

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

文件：146.97 Kbytes 页数：2 Pages

Motorola

摩托罗拉