丝印：IDK；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 4000Watts

FEATURES Peak power dissipation 4000w @10 x 1000 us Pulse Low profile package. Excellent clamping capability. Typical IR less than 2uA when VBR above 12V. Glass passivated junction. Fast response time: typically less than 1.0ps from 0 Volts to BV min IEC 61000-4-2 ESD 30KV(Air), 30KV(Conta

文件：668.54 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：IDK；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：IDK；Package：SMC；SMLJ Transient Voltage Suppressor Diode Series

Features RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 3000 watts Typical temperature coefficient: ΔVBR = 0.1 x VBR @ 25 °C x ΔT Applications IEC 61000-4-2 ESD (Min. Level 4) IEC 61000-4-4 EFT IEC 61000-4-5 Surge

文件：182.78 Kbytes 页数：6 Pages

Bourns

伯恩斯

丝印：IDK；Package：SMCJ；3000W Transient Voltage Suppression Diodes

文件：1.28142 Mbytes 页数：12 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

丝印：IDK；Package：DO-214AB；3000W Surface Mount Transient Voltage Suppressors

文件：609.41 Kbytes 页数：4 Pages

BYTESONIC

松浩电子

丝印：D0212C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：1.06272 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：D0512C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：998.64 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：D8512C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：1.03839 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：D1012C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：1.0387 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：D1612C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：1.07298 Mbytes 页数：12 Pages

Infineon

英飞凌