IDK02G120C5

Marking：D0212C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode

Features Revolutionarysemiconductormaterial-SiliconCarbide Noreverserecoverycurrent/noforwardrecovery Temperatureindependentswitchingbehaviour Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Excellentthermalperformance 

IDK02G120C5XTMA1

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DISCRETE

IDH02G120C5

SiliconCarbideSchottkyDiode

Features: Revolutionarysemiconductormaterial-SiliconCarbide Noreverserecoverycurrent/Noforwardrecovery Temperatureindependentswitchingbehavior Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Excellentthermalperformance 

IDM02G120C5

SiliconCarbideSchottkyDiode