D0212C5

型号：IDH02G120C5；Package：PG-TO220-2-1；Silicon Carbide Schottky Diode

Features: Revolutionarysemiconductormaterial-SiliconCarbide Noreverserecoverycurrent/Noforwardrecovery Temperatureindependentswitchingbehavior Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Excellentthermalperformance 

D0212C5

型号：IDK02G120C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode

Features Revolutionarysemiconductormaterial-SiliconCarbide Noreverserecoverycurrent/noforwardrecovery Temperatureindependentswitchingbehaviour Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Excellentthermalperformance 