丝印：D0212C5；Package：PG-TO220-2-1；Silicon Carbide Schottky Diode

Features: • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery current / No forward recovery • Temperature independent switching behavior • Low forward voltage even at high operating temperature • Tight forward voltage distribution • Excellent thermal performance •

文件：846.51 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：D0212C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode

Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery current / no forward recovery • Temperature independent switching behaviour • Low forward voltage even at high operating temperature • Tight forward voltage distribution • Excellent thermal performance •

文件：1.06272 Mbytes 页数：12 Pages

INFINEON

英飞凌

Silicon Carbide Schottky Diode

Features: • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery current / No forward recovery • Temperature independent switching behavior • Low forward voltage even at high operating temperature • Tight forward voltage distribution • Excellent thermal performance •

文件：846.51 Kbytes 页数：10 Pages

INFINEON

英飞凌