丝印：D0212C5；Package：PG-TO220-2-1；Silicon Carbide Schottky Diode

Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：846.51 Kbytes 页数：10 Pages

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英飞凌

丝印：D0212C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：1.06272 Mbytes 页数：12 Pages

Infineon

英飞凌

Silicon Carbide Schottky Diode

Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：846.51 Kbytes 页数：10 Pages

Infineon

英飞凌