IDK08G120C5

5th Generation CoolSiCTM 1200V Schottky Diode

Features Revolutionarysemiconductormaterial-SiliconCarbide Noreverserecoverycurrent/noforwardrecovery Temperatureindependentswitchingbehaviour Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Excellentthermalperformance 

IDK08G120C5XTMA1

包装：管件 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DISCRETE

IDH08G120C5

SiliconCarbideSchottkyDiode

IDM08G120C5

SiliconCarbideSchottkyDiode