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IDK05G120C5

Marking:D0512C5;Package:PG-TO263-2;5th Generation CoolSiCTM 1200V Schottky Diode

Features Revolutionarysemiconductormaterial-SiliconCarbide Noreverserecoverycurrent/noforwardrecovery Temperatureindependentswitchingbehaviour Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Excellentthermalperformance 

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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