丝印：D085N03M；Package：PDFN3333-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TFD085N03M uses advanced trench technology to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature VDS =30V , ID =25A RDS(

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TUOFENG

拓锋半导体