丝印：D085N03M；Package：PDFN3333-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TFD085N03M uses advanced trench technology to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature VDS =30V , ID =25A RDS(

文件：3.15505 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

场效应管(MOSFET)

TUOFENG

拓锋半导体

N-Channel Enhancement Mode Power MOSFET

Description The G085N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：661.26 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The G085N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：995.43 Kbytes 页数：6 Pages

GOFORD

谷峰半导体