无与伦比的效率和性价比

The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Sc • The lowest V F: 1.25V\n• Best-in-class figure of merit (Q c x V F)\n• No reverse recovery charge\n• Temperature independent switching behavior\n• High dv/dt ruggedness\n• Optimized thermal behavior\n\n优势:\n• Improved system efficiency over all load conditions\n• Increased system power density\n• R;

Infineon

英飞凌

6th Generation CoolSiC?

文件：957.85 Kbytes 页数：10 Pages

INFINEON

英飞凌

Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 12A TO220-2

INFINEON

英飞凌

6th Generation CoolSiC™ 650V SiC Schottky Diode

Features  Best in class forward voltage (1.25 V)  Best in class figure of merit (Qc x VF)  High dv/dt ruggedness (150 V/ns) Benefits  System efficiency improvement  System cost and size savings due to the reduced cooling requirements  Enabling higher frequency and increased power de

文件：688.26 Kbytes 页数：9 Pages

INFINEON

英飞凌