丝印：D0465C6；Package：PG-HDSOP-10-1；6th Generation CoolSiC™ 650V SiC Schottky Diode

Features  Best in class forward voltage (1.25 V)  Best in class figure of merit (Qc x VF)  High dv/dt ruggedness (150 V/ns) Benefits  System efficiency improvement  System cost and size savings due to the reduced cooling requirements  Enabling higher frequency and increased power de

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Power-Silicon Carbide (SiC)-CoolSiC™ Schottky Diode-

Infineon Technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650V G6 is comb • Offers best-in-class VF and FOM Qc x VF \n• Improved dv/dt ruggedness\n• Easy and effective match with CoolMOS™ 7 SJ MOSFET families\n• Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits\n• Reduced parasitic source inductance improves e iciency and ease-of-use\n• E;

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Package：10-PowerSOP 模块；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOT 650V 13A HDSOP-10-1

Infineon

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6th Generation CoolSiC?

文件：957.85 Kbytes 页数：10 Pages

Infineon

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