IDH04G65C6数据手册分立半导体产品的二极管-整流器-单规格书PDF

描述 Description

The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F).

特性 Features

• The lowest V F: 1.25V
• Best-in-class figure of merit (Q c x V F)
• No reverse recovery charge
• Temperature independent switching behavior
• High dv/dt ruggedness
• Optimized thermal behavior

优势:
• Improved system efficiency over all load conditions
• Increased system power density
• Reduced cooling requirements and increased system reliability
• Enables extremely fast switching
• Easy and effective match with CoolMOS™ 7 families
• Optimal price performance

应用 Application

• Server
• Telecom
• PC power
• Solar
• Lighting

简介

IDH04G65C6属于分立半导体产品的二极管-整流器-单。由制造生产的IDH04G65C6二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。