IRC530

PowerMOSFET(Vdss=100V,Rds(on)=0.16ohm,Id=14A)

HEXFET®PowerMOSFET VDSS=100V RDS(on)=0.16Ω ID=14A

IRC530PBF

HEXFET짰PowerMOSFET

IRF530

N-CHANNELPOWERMOSFETS

IRF530

N-CHANNELENHANCEMENT-MODESILICONGATE

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET14AMPERES100VOLTSRDS(on)=0.140Ω

IRF530

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

IRF530

N-ChannelPowerMOSFETs,20A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

IRF530

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

IRF530

N-CHANNEL100V-0.115W-14ATO-220LOWGATECHARGESTripFET??IIPOWERMOSFET

IRF530

N-ChannelPowerMOSFETsAvalancheEnergyRated

IRF530

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS N-channelenhancementmodePOWERMOSfieldeffecttransistors.EasydriveandveryfastswitchingtimesmakethesePOWERMOStransistorsidealforhighspeedswitchingapplications.ApplicationsincludeDC/DCconverters,UPSbatterychargers,s