YELLOW HIGH FLUX LED

Description This revolutionary package design allows the lighting designer to reduce the number of LEDs required and provide a more uniform and unique illuminated appearance than with other LED solutions. This package LEDs are designed for high current operation and high flux output application.

文件：473.04 Kbytes 页数：10 Pages

SEOUL

首尔半导体

N-Channel Enhancement Mode MOSFET

Features 80V/120A RDS(ON)= mW (typ.) @VGS=10V · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHSCompliant) 100% avalanche tested 7.0 Applications · Power Management for Inverter Systems.

文件：4.79775 Mbytes 页数：14 Pages

HOOYI

后羿半导体

N-Channel Enhancement Mode MOSFET

Features 80V/120A RDS(ON)= mW (typ.) @VGS=10V · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHSCompliant) 100% avalanche tested 7.0 Applications · Power Management for Inverter Systems.

文件：4.79775 Mbytes 页数：14 Pages

HOOYI

后羿半导体

N-Channel Enhancement Mode MOSFET

Features 80V/120A RDS(ON)= mW (typ.) @VGS=10V · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHSCompliant) 100% avalanche tested 7.0 Applications · Power Management for Inverter Systems.

文件：4.79775 Mbytes 页数：14 Pages

HOOYI

后羿半导体

N-Channel Enhancement Mode MOSFET

Features 80V/120A RDS(ON)= mW (typ.) @VGS=10V · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHSCompliant) 100% avalanche tested 7.0 Applications · Power Management for Inverter Systems.

文件：4.79775 Mbytes 页数：14 Pages

HOOYI

后羿半导体

N-Channel Enhancement Mode MOSFET

Features 80V/120A RDS(ON)= mW (typ.) @VGS=10V · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHSCompliant) 100% avalanche tested 7.0 Applications · Power Management for Inverter Systems.

文件：4.79775 Mbytes 页数：14 Pages

HOOYI

后羿半导体

N-Channel Enhancement Mode MOSFET

Features 80V/120A RDS(ON)= mW (typ.) @VGS=10V · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHSCompliant) 100% avalanche tested 7.0 Applications · Power Management for Inverter Systems.

文件：4.79775 Mbytes 页数：14 Pages

HOOYI

后羿半导体

N-Channel Enhancement Mode MOSFET

Features · 100V/160A RDS(ON) = mW (typ.) @ VGS =10V · 100% avalanche tested · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Switching application · Power Management for Inverter Systems

文件：1.13277 Mbytes 页数：10 Pages

HOOYI

后羿半导体

丝印：HY3610；Package：TO220-3L；N-Channel Enhancement Mode MOSFET

Features · 100V/160A RDS(ON) = mW (typ.) @ VGS =10V · 100% avalanche tested · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Switching application · Power Management for Inverter Systems

文件：1.13277 Mbytes 页数：10 Pages

HOOYI

后羿半导体

N-Channel Enhancement Mode MOSFET

Features 100V/180A RDS(ON)= m(typ.) @VGS=10V Reliable and Rugged Lead Free andGreenDevicesAvailable (RoHSCompliant) 100 avalanche tested 5.0 Applications • Power Management for Inverter Systems. • Switching application

文件：943.68 Kbytes 页数：14 Pages

HUAYI

华羿微电