HY3610P芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
HY3610P	文件：1.13277 Mbytes Page：10 Pages	丝印：HY3610；Package：TO220-3L；N-Channel Enhancement Mode MOSFET Features · 100V/160A RDS(ON) = mW (typ.) @ VGS =10V · 100% avalanche tested · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Switching application · Power Management for Inverter Systems 文件：1.13277 Mbytes 页数：10 Pages	HOOYI 后羿半导体	HOOYI
HY3610P	文件：1.13277 Mbytes Page：10 Pages	丝印：HY3610；Package：TO220-3L；N-Channel Enhancement Mode MOSFET Features · 100V/160A RDS(ON) = mW (typ.) @ VGS =10V · 100% avalanche tested · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Switching application · Power Management for Inverter Systems 文件：1.13277 Mbytes 页数：10 Pages	HOOYI 后羿半导体	HOOYI
HY3610	文件：1.13277 Mbytes Page：10 Pages	N-Channel Enhancement Mode MOSFET Features · 100V/160A RDS(ON) = mW (typ.) @ VGS =10V · 100% avalanche tested · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Switching application · Power Management for Inverter Systems 文件：1.13277 Mbytes 页数：10 Pages	HOOYI 后羿半导体	HOOYI

更多HY3610供应商更新时间2026-1-18 11:00:00