IM830E

MEMSOscillator,-55째Cto125째C,LVCMOS/HCMOSCompatible,1.000MHzto110.000MHz

IM830E

Pb-free,RoHSandREACHcompliant

IRC830

PowerMOSFET(Vdss=500V,Rds(on)=1.5ohm,Id=4.5A)

IRC830

Dynamicdv/dfRating

IRC830PBF

Dynamicdv/dfRating

IRF830

N-CHANNEL500V-1.35ohm-4.5A-TO-220PowerMESH]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=1.35Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■1

IRF830

PowerMOStransistorAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. FEATURES •Repe

IRF830

N-CHANNELENHANCEMENTMODE

PowerFieldEffectTransistor N−ChannelEnhancementMode •SiliconGateforFastSwitchingSpeeds •LowRDS(on)toMinimizeOn−Losses,SpecifiedatElevated Temperature •Rugged—SOAisPowerDissipationLimited •Source−to−DrainDiodeCharacterizedforUsewithInductiveLoads

IRF830

N-ChannelPowerMOSFETs,4.5A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VGSRatedat±20V •SiliconGateforFastSwitchi

IRF830

4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching