HUF75639G3资料datasheet下载供应代理-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HUF75639G3	文件：229.33 Kbytes Page：10 Pages	56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：229.33 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
HUF75639G3	文件：234.92 Kbytes Page：10 Pages	56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：234.92 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
HUF75639G3	文件：370.04 Kbytes Page：9 Pages	56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：370.04 Kbytes 页数：9 Pages	INTERSIL	INTERSIL
HUF75639P3	文件：234.92 Kbytes Page：10 Pages	56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：234.92 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
HUF75639P3	文件：370.04 Kbytes Page：9 Pages	56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：370.04 Kbytes 页数：9 Pages	INTERSIL	INTERSIL
HUF75639P3	文件：229.33 Kbytes Page：10 Pages	56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：229.33 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
HUF75639S3	文件：234.92 Kbytes Page：10 Pages	56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：234.92 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
HUF75639S3	文件：229.33 Kbytes Page：10 Pages	56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：229.33 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
HUF75639S3R4851	文件：204.57 Kbytes Page：10 Pages	56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the 文件：204.57 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
HUF75639S3R4851	文件：136.53 Kbytes Page：10 Pages	56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the 文件：136.53 Kbytes 页数：10 Pages	INTERSIL	INTERSIL

技术参数

Pb-free：
Pb
Halide free：
H
Status：
Active
Channel Polarity：
N-Channel
Configuration：
Single
V(BR)DSS Min (V)：
100
VGS Max (V)：
±20
VGS(th) Max (V)：
4
ID Max (A)：
56
PD Max (W)：
200
RDS(on) Max @ VGS = 10 V(mΩ)：
25
Qg Typ @ VGS = 10 V (nC)：
57
Ciss Typ (pF)：
2000
Package Type：
TO-247-3

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市欧立现代科技有限公司	HUF75639G3	INTERSIL	24+	TO-3P	7530	绝对原装现货,价格低,欢迎询购!	询价
深圳市河锋鑫科技有限公司	HUF75639G3	FAIRCHILD/仙童	17+	TO-247TO-3PTO-3PF	31518	原装正品可含税交易	询价
深圳市科恒伟业电子有限公司	HUF75639G3	FAIRCHILD/仙童	2450+	TO-247	9850	只做原装正品现货或订货假一赔十!	询价
深圳市高捷芯城科技有限公司	HUF75639G3	onsemi(安森美)	25+	TO-247-3	18798	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
芯有半导体（深圳）有限公司	HUF75639G3	仙童	06+	TO-247	600	原装库存	询价
深圳市达恩科技有限公司	HUF75639G3	FairchildSemiconductor	24+	NA	3000	进口原装正品优势供应	询价
深圳市振宏微科技有限公司	HUF75639G3	FAIRCHILD	23+	TO-3P	8000	专做原装正品,假一罚百!	询价
深圳市华斯顿科技有限公司	HUF75639G3	FAIRCHILD	25+23+	TO247	7324	绝对原装正品全新进口深圳现货	询价
深圳市纳立科技有限公司	HUF75639G3		三年内		1983	只做原装正品	询价
中天科工半导体（深圳）有限公司	HUF75639G3	Fairchild	20+	原装	65790	原装优势主营型号-可开原型号增税票	询价

更多HUF75639供应商更新时间2026-1-27 17:02:00

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