HUF75309D3ST技术资料参数库存现货百域芯-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
HUF75309D3ST	文件：780.05 Kbytes Page：5 Pages	N-channel Enhancement Mode Power MOSFET Features  VDS= 60V, ID= 50A RDS(ON) 文件：780.05 Kbytes 页数：5 Pages	Bychip 百域芯	Bychip
HUFA75309D3	文件：217.28 Kbytes Page：10 Pages	19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：217.28 Kbytes 页数：10 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HUFA75309D3S	文件：723.95 Kbytes Page：5 Pages	N-channel Enhancement Mode Power MOSFET Features  VDS= 60V, ID= 50A RDS(ON) 文件：723.95 Kbytes 页数：5 Pages	Bychip 百域芯	Bychip
HUFA75309D3S	文件：217.28 Kbytes Page：10 Pages	19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：217.28 Kbytes 页数：10 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

更多HUF75309D3ST供应商更新时间2025-10-7 16:04:00