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HUF75309D3ST

N-channel Enhancement Mode Power MOSFET

Features VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

HUF75309D3

19A,55V,0.070Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET™process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

Intersil

Intersil Corporation

HUF75309D3

19A,55V,0.070Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET®process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HUF75309D3S

N-channelEnhancementModePowerMOSFET

Features VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

HUF75309D3S

19A,55V,0.070Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET™process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

Intersil

Intersil Corporation

HUF75309D3S

19A,55V,0.070Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET®process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HUFA75309D3

19A,55V,0.070Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET®process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HUFA75309D3S

N-channelEnhancementModePowerMOSFET

Features VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

HUFA75309D3S

19A,55V,0.070Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET®process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    HUF75309D3ST

  • 功能描述:

    MOSFET 19a 55V N-Channel UltraFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INTERSIL
19+
TO-252
21560
询价
FAIRCHILD/仙童
24+
TO-252
21567
只做原厂渠道 可追溯货源
询价
INTERSIL
05+
原厂原装
74270
只做全新原装真实现货供应
询价
INTERSIL
25+23+
TO-252
14902
绝对原装正品全新进口深圳现货
询价
FAIRCHIL
24+
TO-252
90000
一级代理商进口原装现货、价格合理
询价
INTERSI
24+
TO-252
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
FAIRCHILD/仙童
23+
TO-252
30000
全新原装现货,价格优势
询价
ST/意法
21+
TO252
1574
询价
INTERSIL
23+
TO-252
50000
全新原装正品现货,支持订货
询价
INTERSIL
21+
TO-252
10000
原装现货假一罚十
询价
更多HUF75309D3ST供应商 更新时间2025-5-18 10:20:00