60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：228.25 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：210.94 Kbytes 页数：18 Pages

INTERSIL

N-Channel UltraFET Power MOSFET

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：766.9 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs

文件：303.15 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel UltraFET Power MOSFET

ONSEMI

安森美半导体