49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the • 49A, 55V\n• Temperature Compensating PSPICE® and SABER© Models\n• Thermal Impedance PSPICE and SABER Models\n• UIS Rating Curve\n• Related Literature\n   - TB334, “Guidelines for Soldering Surface Mount\n      Components to PC Boards”;

Renesas

瑞萨

49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：295.64 Kbytes 页数：10 Pages

Fairchild

仙童半导体

49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：295.64 Kbytes 页数：10 Pages

Fairchild

仙童半导体

49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：173.94 Kbytes 页数：9 Pages

Intersil

49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：252.91 Kbytes 页数：10 Pages

Fairchild

仙童半导体