15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

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15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：204.78 Kbytes 页数：18 Pages

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15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：219.57 Kbytes 页数：10 Pages

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仙童半导体

15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：204.78 Kbytes 页数：18 Pages

INTERSIL

15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：219.57 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：204.78 Kbytes 页数：18 Pages

INTERSIL

2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d

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2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d

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2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the dio • 2.6A, 55V\n• Ultra Low On-Resistance, rDS(ON) = 0.090Ω\n• Diode Exhibits Both High Speed and Soft Recovery\n• Temperature Compensating PSPICE® Model\n• Thermal Impedance SPICE Model\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• Related Literature\n  - TB334, “Guidelines for Soldering;

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2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the dio • 2.6A, 55V\n• Ultra Low On-Resistance, rDS(ON) = 0.090Ω\n• Diode Exhibits Both High Speed and Soft Recovery\n• Temperature Compensating PSPICE® Model\n• Thermal Impedance SPICE Model\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• Related Literature\n  - TB334, “Guidelines for Soldering;

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