型号：ADA4851-2YRMZ；Package：MSOP；Low Cost, High Speed, Rail-to-Rail, Output Op Amps

FEATURES Qualified for automotive applications High speed 130 MHz, −3 dB bandwidth 375 V/μs slew rate 55 ns settling time to 0.1% Excellent video specifications 0.1 dB flatness: 11 MHz Differential gain: 0.08% Differential phase: 0.09° Fully specified at +3 V, +5 V, and ±5 V supp

文件：407.67 Kbytes 页数：24 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

型号：ADA4851-2YRMZ-RL；Package：MSOP；Low Cost, High Speed, Rail-to-Rail, Output Op Amps

FEATURES Qualified for automotive applications High speed 130 MHz, −3 dB bandwidth 375 V/μs slew rate 55 ns settling time to 0.1% Excellent video specifications 0.1 dB flatness: 11 MHz Differential gain: 0.08% Differential phase: 0.09° Fully specified at +3 V, +5 V, and ±5 V supp

文件：407.67 Kbytes 页数：24 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

型号：ADA4851-2YRMZ-RL7；Package：MSOP；Low Cost, High Speed, Rail-to-Rail, Output Op Amps

FEATURES Qualified for automotive applications High speed 130 MHz, −3 dB bandwidth 375 V/μs slew rate 55 ns settling time to 0.1% Excellent video specifications 0.1 dB flatness: 11 MHz Differential gain: 0.08% Differential phase: 0.09° Fully specified at +3 V, +5 V, and ±5 V supp

文件：407.67 Kbytes 页数：24 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

型号：HSB0104YP；Silicon Schottky Barrier Diode for High Speed Switching

Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

文件：27.76 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

型号：HSB0104YP；Silicon Schottky Barrier Diode for High Speed Switching

Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

文件：76.11 Kbytes 页数：5 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

型号：HSB02-101007；HEAT SINK

FEATURES • BGA design • small footprint • aluminum alloy • black anodized finish

文件：384.98 Kbytes 页数：3 Pages

CUID

CUI Devices

型号：HSB03-141406；HEAT SINK

FEATURES • BGA design • small footprint • aluminum alloy • black anodized finish

文件：362.36 Kbytes 页数：3 Pages

CUID

CUI Devices

型号：HSB10-232306；HEAT SINK

FEATURES • BGA design • top mount • aluminum alloy • black anodized finish

文件：389.73 Kbytes 页数：3 Pages

CUID

CUI Devices

型号：HSB1109；PNP EPITAXIAL PLANAR TRANSISTOR

Features • Low frequency high voltage amplifier • Complementary pair with HSD1609

文件：33.34 Kbytes 页数：3 Pages

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

型号：HSB1109S；PNP EPITAXIAL PLANAR TRANSISTOR

Description The HSB1109S is designed for low frequency and high voltage amplifier applications complementary pair with HSD1609S.

文件：36.81 Kbytes 页数：4 Pages

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司