MOSFET

HOMSSEMI

成启

N-Channel MOSFET Transistor

文件：338.68 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • High Frequency DC-DC Converters • Uninterruptible Power Supply • FEATURES • Static drain-source on-resistance: RDS(on)≤14mΩ • Enhancement mode: Vth =3.5 to 5.5 V (VDS=VGS, ID=250μ A) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performa

文件：335.59 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=100v, Rds(on)max=0.014ohm, Id=75A)

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Motor Control ● Uninterru

文件：245.14 Kbytes 页数：11 Pages

IRF