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HS-303CEH

Radiation Hardened BiCMOS Dual SPDT Analog Switch

The HS-303CEH is an analog switch and a monolithic device that is fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to insure latch-up free operation. It is pinout compatible and functionally equivalent to the HS-303RH. This switch offers

文件:476.07 Kbytes 页数:10 Pages

INTERSIL

HS-303CEH

Radiation Hardened BiCMOS Dual SPDT Analog Switch

Features • QML, per MIL-PRF-38535 • No latch-up, dielectrically isolated device islands • Pinout and functionally compatible with the HS-303RH series of analog switches • Analog signal range equal to the supply voltage range • Low leakage: 150nA (max, post-rad) • Low rON: 60Ω (max, post-ra

文件:521.58 Kbytes 页数:14 Pages

RENESAS

瑞萨

HS-303CEH

Radiation Hardened BiCMOS Dual SPDT Analog Switch

▪ Qualified & Screened to DLA SMD 5962-95813 ▪ No latch-up, dielectrically isolated device islands ▪ Pinout and functionally compatible with the HS-303RH series of analog switches ▪ Analog signal range equal to the supply voltage range ▪ Low leakage: 150nA (max, post-rad) ▪ Low rON: 60Ω (ma

文件:667.37 Kbytes 页数:13 Pages

RENESAS

瑞萨

HS-303CEH_V01

Radiation Hardened BiCMOS Dual SPDT Analog Switch

▪ Qualified & Screened to DLA SMD 5962-95813 ▪ No latch-up, dielectrically isolated device islands ▪ Pinout and functionally compatible with the HS-303RH series of analog switches ▪ Analog signal range equal to the supply voltage range ▪ Low leakage: 150nA (max, post-rad) ▪ Low rON: 60Ω (ma

文件:667.37 Kbytes 页数:13 Pages

RENESAS

瑞萨

HS-303CEH

抗辐射 BiCMOS 双 SPDT 模拟开关

The HS-303CEH is an analog switch and a monolithic device that is fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to insure latch-up free operation. It is pinout compatible and functionally equivalent to the HS-303RH. This switch offers lo •QML, per MIL-PRF-38535 \n• Pinout and functionally compatible with Intersil HS-303RH series analog switches \n• Low leakage: 150nA (max, post-rad) \n• Low standby supply current: ±150µA (max, post-rad) \n• High dose rate (50 to 300rad(Si)/s): 100krad(Si) \n• Single event effects \n• For LET = 60MeV;

Renesas

瑞萨

技术参数

  • High Dose Rate (HDR) (krad (Si)):

    100

  • Low Dose Rate (LDR) (krad (Si)):

    50

  • SMD URL:

    5962-95813

  • DLA SMD:

    5962R9581308V9A

  • Pkg. Class:

    V

  • Qualification Level:

    QML Class Q (Military)

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更多HS-303CEH供应商 更新时间2026-4-21 16:51:00