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HS-303CEH数据手册Renesas中文资料规格书

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厂商型号

HS-303CEH

功能描述

抗辐射 BiCMOS 双 SPDT 模拟开关

制造商

Renesas Renesas Technology Corp

中文名称

瑞萨 瑞萨科技有限公司

数据手册

下载地址下载地址二

更新时间

2025-8-6 23:00:00

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HS-303CEH规格书详情

描述 Description

The HS-303CEH is an analog switch and a monolithic device that is fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to insure latch-up free operation. It is pinout compatible and functionally equivalent to the HS-303RH. This switch offers low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant over the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303CEH can operate with rails of ±15V.
Specifications The Detailed Electrical Specifications for the HS-303CEH is contained in SMD 5962-95813.

特性 Features

•QML, per MIL-PRF-38535
• No latch-up, dielectrically isolated device islands
• Pinout and functionally compatible with Intersil HS-303RH series analog switches
• Analog signal range equal to the supply voltage range
• Low leakage: 150nA (max, post-rad)
• Low rON: 60Ω (max, post-rad)
• Low standby supply current: ±150µA (max, post-rad)
• Radiation assurance
• High dose rate (50 to 300rad(Si)/s): 100krad(Si)
• Low dose rate (0.01rad(Si)/s): 50krad(Si)*
• Single event effects
• For LET = 60MeV-mg/cm2 at 60° incident angle, * Product capability established by initial characterization. The EH version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate.

技术参数

  • 制造商编号

    :HS-303CEH

  • 生产厂家

    :Renesas

  • High Dose Rate (HDR) (krad (Si))

    :100

  • Low Dose Rate (LDR) (krad (Si))

    :50

  • SMD URL

    :5962-95813

  • DLA SMD

    :5962R9581308V9A

  • Pkg. Class

    :V

  • Qualification Level

    :QML Class Q (Military)

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