HS-303CEH中文资料瑞萨数据手册PDF规格书

▪ Qualified & Screened to DLA SMD 5962-95813

▪ No latch-up, dielectrically isolated device islands

▪ Pinout and functionally compatible with the

HS-303RH series of analog switches

▪ Analog signal range equal to the supply voltage

range

▪ Low leakage: 150nA (max, post-rad)

▪ Low rON: 60Ω (max, post-rad)

▪ Low standby supply current: ±150μA (max,

post-rad)

▪ TID Rad Hard Assurance (RHA) wafer-by-wafer

testing

• HDR (50rad(Si)/s to 300rad(Si)/s): 100krad(Si)

• LDR (<0.01rad(Si)/s): 50krad(Si)

▪ SEE Characterization

• For LET = 60MeV·cm2/mg at 60° incident angle,

<150pC charge transferred to the output of an off

switch (based on SOI design calculations)