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HS-303BRH

Radiation Hardened CMOS Dual SPDT Analog Switch

Features • QML, per MIL-PRF-38535 • Radiation performance ○ Total dose: 3x105rad(Si) ○ SEE: For LET = 60MeV•cm2/mg at 60° incident angle,

文件:251.1 Kbytes 页数:7 Pages

RENESAS

瑞萨

HS-303BRH

Radiation Hardened CMOS Dual SPDT Analog Switch

文件:201.97 Kbytes 页数:5 Pages

INTERSIL

HS-303BRH

抗辐射 CMOS 双 SPDT 模拟开关

The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog switches are monolithic devices fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to insure latch-up free operation. They are pinout compatible and functionally equivalent to the HS-303RH • QML, per MIL-PRF-38535 \n• Radiation performance \n• Total dose: 3x105 rad(Si) \n• SEE: For LET = 60MeV-mg/cm2 at 60° incident angle, • No latch-up, dielectrically isolated device islands \n• Pinout and functionally compatible with Intersil HS-303RH and HI-303 series analog switches \n• Analog sig;

Renesas

瑞萨

HS-303CEH

Radiation Hardened BiCMOS Dual SPDT Analog Switch

Features • QML, per MIL-PRF-38535 • No latch-up, dielectrically isolated device islands • Pinout and functionally compatible with the HS-303RH series of analog switches • Analog signal range equal to the supply voltage range • Low leakage: 150nA (max, post-rad) • Low rON: 60Ω (max, post-ra

文件:521.58 Kbytes 页数:14 Pages

RENESAS

瑞萨

HS-303CEH

Radiation Hardened BiCMOS Dual SPDT Analog Switch

The HS-303CEH is an analog switch and a monolithic device that is fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to insure latch-up free operation. It is pinout compatible and functionally equivalent to the HS-303RH. This switch offers

文件:476.07 Kbytes 页数:10 Pages

INTERSIL

HS-303CEH

Radiation Hardened BiCMOS Dual SPDT Analog Switch

▪ Qualified & Screened to DLA SMD 5962-95813 ▪ No latch-up, dielectrically isolated device islands ▪ Pinout and functionally compatible with the HS-303RH series of analog switches ▪ Analog signal range equal to the supply voltage range ▪ Low leakage: 150nA (max, post-rad) ▪ Low rON: 60Ω (ma

文件:667.37 Kbytes 页数:13 Pages

RENESAS

瑞萨

技术参数

  • High Dose Rate (HDR) (krad (Si)):

    300

  • SMD URL:

    5962-95813

  • DLA SMD:

    5962F9581305QCC

  • Pkg. Class:

    V

  • Qualification Level:

    QML Class Q (Military)

供应商型号品牌批号封装库存备注价格
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GUAN JIASHENG ELECTRONIC HARDW
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实单价格可谈
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更多HS-303BRH供应商 更新时间2026-1-23 16:06:00