NPN EXPITAXIAL SILICON TRANSISTOR

General Purpose Transistor Collector Emitter Voltage: VCEO = 40V Collector Dissiption: Pc(max) = 625mW

文件：209.64 Kbytes 页数：3 Pages

SEMTECH

先之科

NPN EXPITAXIAL SILICON TRANSISTOR

General Purpose Transistor Collector Emitter Voltage: VCEO = 40V Collector Dissiption: Pc(max) = 625mW

文件：209.64 Kbytes 页数：3 Pages

SEMTECH

先之科

PNP EXPITAXIAL SILICON TRANSISTOR?

PNP EXPITAXIAL SILICON TRANSISTOR General purpose transistor

文件：209.99 Kbytes 页数：3 Pages

SEMTECH

先之科

PNP EXPITAXIAL SILICON TRANSISTOR?

PNP EXPITAXIAL SILICON TRANSISTOR General purpose transistor

文件：209.99 Kbytes 页数：3 Pages

SEMTECH

先之科

2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY

2048-word x 8-bit UV Erasable and Electrically Programmable Only Memory The HN462716 is a 2048 word by 8 bit erasable and electrically programmable ROMs. This device is packaged in a 24-pin dual-in-line package with transparent lid. The transparent lid allows the usre to expose the chip to ultrav

文件：305.37 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY

2048-word x 8-bit UV Erasable and Electrically Programmable Only Memory The HN462716 is a 2048 word by 8 bit erasable and electrically programmable ROMs. This device is packaged in a 24-pin dual-in-line package with transparent lid. The transparent lid allows the usre to expose the chip to ultrav

文件：305.37 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

4096-WORD x 8-BIT UV ERASABLE AND PROGRAMMABLE READ ONLY MEMORY

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：270.09 Kbytes 页数：4 Pages

HitachiHitachi Semiconductor

日立日立公司

Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)

MOS Gate Drive Applications Switching Applications • Small footprint due to a small and thin package • High DC current gain : hFE = 200 to 500 (IC = −0.12 A) • Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max) : NPN VCE (sat) =

文件：244.97 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝