MTP50P03HDL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP50P03HDL

TMOSPOWERFETLOGICLEVEL50AMPERES30VOLTSRDS(on)=0.025OHM

HDTMOSE-FETPowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecover

MTP50P03HDL

PowerMOSFET50Amps,30Volts,LogicLevelP-ChannelTO-220

MTP50P03HDLG

PowerMOSFET50Amps,30Volts,LogicLevelP-ChannelTO-220

NP50P03YDG

ProductScoutAutomotive

NP50P03YDG

MOSFIELDEFFECTTRANSISTOR

Description TheNP50P03YDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=8.4mΩMAX.(VGS=−10V,ID=−25A) •LowCiss:Ciss=2300pFTYP.(VDS=−25V,VGS=0V) •Designedforautomotiveapp

SPD50P03L

OptiMOS-PPower-Transistor

Feature •P-Channel •Enhancementmode •LogicLevel •Highcurrentrating •175°Coperatingtemperature •Avalancherated •dv/dtrated

SPD50P03LG

OptiMOS-PPower-Transistor

Features •P-Channel •Enhancementmode •Logiclevel •175°Coperatingtemperature •Avalancherated •dv/dtrated •Highcurrentrating •Pb-freelead-plating,RoHScompliant

SPD50P03LG

OptiMOS짰-PPower-Transistor

SPD50P03LG

P-Channel30V(D-S)MOSFET

FEATURES •ComplianttoRoHSDirective2002/95/EC