丝印：HM50N10K；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

文件：629.03 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

N沟道中压大电流MOS(100V以上)

HmpowerSemi

虹美功率

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

文件：48.38 Kbytes 页数：2 Pages

MICROSEMI

美高森美

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

文件：48.38 Kbytes 页数：2 Pages

MICROSEMI

美高森美

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.027 Ω ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURREN

文件：94.57 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体