STFV4N150

N-channel1500V-5廓-4A-PowerMESH??PowerMOSFETTO-220-TO-220FH-TO-247-TO-3PF

STFV4N150

N-CHANNEL1500V-5-ohm-4ATO-220FHVeryHighVoltagePowerMESH-TMMOSFET

Description UsingthewellconsolidatedhighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofveryhighvoltagePowerMOSFETswithoutstandingperformances. Thestrengthenedlayoutcoupledwiththecompany’sproprietaryedgeterminationstructure,givesth

STFW4N150

N-channel1500V,5廓,4A,PowerMESH??PowerMOSFETinTO-220,TO-247,TO-3PF

STFW4N150

N-channel1500V-5廓-4A-PowerMESH??PowerMOSFETTO-220-TO-220FH-TO-247-TO-3PF

STFW4N150

iscN-ChannelMOSFETTransistor

·FEATURES ·DrainCurrentID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)

STP4N150

N-CHANNEL1500V-5-4ATO-220/TO-247VeryHighVoltagePowerMESHMOSFET

Description UsingthewellconsolidatedhighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofveryhighvoltagePowerMOSFETswithoutstandingperformances. Thestrengthenedlayoutcoupledwiththecompany’sproprietaryedgeterminationstructure,givesth

STP4N150

N-channel1500V,5廓,4A,PowerMESH??PowerMOSFETinTO-220,TO-247,TO-3PF

STP4N150

N-channel1500V-5廓-4A-TO-220/TO-247VeryhighPowerMESH??PowerMOSFET

STP4N150

N-channel1500V-5廓-4A-PowerMESH??PowerMOSFETTO-220-TO-220FH-TO-247-TO-3PF

STP4N150

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive,DC