STFV4N150中文资料意法半导体数据手册PDF规格书
STFV4N150规格书详情
描述 Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
■ 100 avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF and TO-220FH plastic packages
■ Creepage distance path is 5.4 mm (typ.) for TO-3PF
■ Creepage distance path is > 4 mm for TO-220FH
Application
■ Switching applications
产品属性
- 型号：
STFV4N150
- 功能描述：
MOSFET IGBT
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
TO-3PF-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST |
22+ |
TO2203 Isolated Tab |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST/意法半导体 |
21+ |
TO-3PF-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
9999 |
询价 | |||
ST/意法半导体 |
23+ |
TO-3PF-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
ST |
24+ |
TO-220-3 |
43 |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
STMicroelectronics |
2022+ |
TO-220-3 全封装,隔离接片 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
