STFV4N150中文资料意法半导体数据手册PDF规格书
STFV4N150规格书详情
Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
■ 100 avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF and TO-220FH plastic packages
■ Creepage distance path is 5.4 mm (typ.) for TO-3PF
■ Creepage distance path is > 4 mm for TO-220FH
Application
■ Switching applications
产品属性
- 型号：
STFV4N150
- 功能描述：
MOSFET IGBT
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
TO2203 Isolated Tab |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST |
07+/08+ |
TO-220-3 |
43 |
询价 | |||
ST |
16+ |
07+ |
1 |
原装现货假一罚十 |
询价 | ||
ST |
2405+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83268796邹小姐 |
询价 | ||
STMicroelectronics |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
询价 | ||
STM |
2023+ |
TO-247 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
STM |
23+ |
TO-3PF (ISOWATT-218FX) |
50000 |
原装正品 支持实单 |
询价 | ||
ST/意法半导体 |
2023+ |
TO-3PF-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法半导体 |
23+ |
TO-3PF-3 |
7188 |
秉承只做原装 终端我们可以提供技术支持 |
询价 | ||
ST/意法半导体 |
21+ |
TO-3PF-3 |
8860 |
只做原装,质量保证 |
询价 |
