Power switch circuit of adaptor and charger

文件：616 Kbytes 页数：9 Pages

HMSEMI

华之美半导体

高压MOS

HmpowerSemi

虹美功率

High Voltage Power MOSFETs

Features ● International standard packages ● Low RDS (on) ● Rated for unclamped Inductive load Switching (UIS) ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ● Easy to mount ● Space savings ● High power density

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IXYS

艾赛斯

TMOS POWER FET 3.0 AMPERES 1200 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

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MOTOROLA

摩托罗拉

TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high–voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time.

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MOTOROLA

摩托罗拉