| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HighVoltageIGBT VCES=1200V IC25=40A VCE(sat)=3.4V tfi(typ)=160ns Features •HighVoltageIGBTforresonantpowersupplies -Inductionheating -Ricecookers •Internationalstandardpackages JEDECTO-268surfaceand JEDECTO-247AD •Lowswitchinglosses, | IXYS IXYS Corporation | IXYS | ||
IGBT Features •Internationalstandardpackages JEDECTO-220ABandTO-263AA •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DCchoppers •Uninterruptiblepowersupplies(UPS) •Switch-modeand | IXYS IXYS Corporation | IXYS | ||
HighVoltageIGBTwithDiode | IXYS IXYS Corporation | IXYS | ||
HighVoltageIGBTwithDiode Features ●Internationalstandardpackage ●IGBTandanti-parallelFREDfor resonantpowersupplies -Inductionheating -Ricecookers ●MOSGateturn-on -drivesimplicity ●FastRecoveryExpitaxialDiode(FRED) -softrecoverywithlowIRM Advantages ●Savesspace(two | IXYS IXYS Corporation | IXYS | ||
IGBT VCES=1200V IC25=40A VCE(sat)=2.5V tfi(typ)=380ns Features •Internationalstandardpackages JEDECTO-247andTO-268 •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoan | IXYS IXYS Corporation | IXYS | ||
HighVoltageIGBT VCES=1200V IC25=40A VCE(sat)=3.4V tfi(typ)=160ns Features •HighVoltageIGBTforresonantpowersupplies -Inductionheating -Ricecookers •Internationalstandardpackages JEDECTO-268surfaceand JEDECTO-247AD •Lowswitchinglosses, | IXYS IXYS Corporation | IXYS | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsre | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsre | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
InsulatedGateBipolarTransistorwithAnti-ParallelDiode ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
InsulatedGateBipolarTransistorwithAnti-ParallelDiode ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025+ |
DFN5X6-8L |
986966 |
国产 |
询价 | ||
VBSEMI/微碧半导体 |
24+ |
TO252 |
60000 |
询价 | |||
VBSEMI/微碧半导体 |
24+ |
TO252 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 | ||
H |
TO-3P |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
HMSEMI |
23+ |
TO-3P |
79999 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
H |
23+ |
TO-3P |
6000 |
原装正品，支持实单 |
询价 | ||
HMSEMI |
23+ |
TO-3P |
6800 |
专注配单,只做原装进口现货 |
询价 | ||
HMSEMI |
23+ |
TO-3P |
6800 |
专注配单,只做原装进口现货 |
询价 | ||
H |
25+ |
TO-3P |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
NK/南科功率 |
2511 |
DFN2X2-6L |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 |
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