丝印：HM100N20T；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

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HMSEMI

华之美半导体

N沟道中压大电流MOS(100V以上)

HmpowerSemi

虹美功率

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● U

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IXYS

艾赛斯

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 100A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converter · Battery Chargers · Synchronous Rectification

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ISC

无锡固电

N-Channel Super Trench Power MOSFET

文件：770.6 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子