丝印：NCEP02T10D；Package：TO-263-2L；N-Channel Super Trench Power MOSFET

文件：770.6 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

10V Drive Nch MOSFET

Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. Application Switching

文件：1.17105 Mbytes 页数：7 Pages

ROHM

罗姆

N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：1.00833 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Switching (200V, 10A)

Switching (200V, 10A) Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. Application Switching

文件：62.12 Kbytes 页数：4 Pages

ROHM

罗姆