Switching (200V, 10A)

Switching (200V, 10A) Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. Application Switching

文件：62.12 Kbytes 页数：4 Pages

ROHM

罗姆

Silicon N-channel MOSFET

Switching (200V, 10A) 1) Low on-resistance.\n2) Low input capacitance.\n3) Exellent resistance to damage from static electricity.Application\nSwitching;

ROHM

罗姆

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE ■ HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING) ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ EASY TO MOUNT ■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS ■ EXTREMELY LOW Rth

文件：156.86 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-Channel Enhancement Mode Power MOSFET

文件：561.78 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● U

文件：112.37 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 100A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converter · Battery Chargers · Synchronous Rectification

文件：536.78 Kbytes 页数：3 Pages

ISC

无锡固电