RDN100N20

Switching (200V, 10A)

Switching(200V,10A) Features 1)Lowon-resistance. 2)Lowinputcapacitance. 3)Exellentresistancetodamagefromstaticelectricity. Application Switching

HM100N20T

N-ChannelEnhancementModePowerMOSFET

IXFN100N20

HiPerFETPowerMOSFETs

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●U

IXFN100N20

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage -VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverter ·BatteryChargers ·SynchronousRectification

LMPC100N20

N-ChannelSuperTrenchPowerMOSFET

RCD100N20

10VDriveNchMOSFET

Features 1)Lowon-resistance. 2)High-speedswitching. 3)WiderangeofSOA. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Application Switching

RCD100N20TL

N-Channel200V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •PWMOptimized •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

STE100N20

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORINISOTOPPACKAGE

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORINISOTOPPACKAGE ■HIGHCURRENTPOWERMODULE ■AVALANCHERUGGEDTECHNOLOGY(SEESTH33N20FIFORRATING) ■VERYLARGESOA-LARGEPEAKPOWERCAPABILITY ■EASYTOMOUNT ■SAMECURRENTCAPABILITYFORTHETWOSOURCETERMINALS ■EXTREMELYLOWRth