首页 >HM100N03K>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelenhancementmodefield-effecttransistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■TrenchMOS™technology ■Lowon-stateresistance ■Avalancheruggednessrated ■Logiclevelcompatible ■Surfacemountpackage. Applications ■DCtoDCconverters ■ | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
Switching(30V,10A) Features 1)LowQg. 2)Lowon-resistance. 3)Exellentresistancetodamagefromstaticelectric Structure SiliconN-channel MOSFET | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
4VDriveNchMOSFET 4VDriveNchMOSFET Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallSurfaceMountPackage(SOP8). Application Powerswitching,DC/DCconverter. | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Switching(30V,짹10A) Switching(30V,±10A) Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallandSurfaceMountPackage(SOP8). Applications Powerswitching,DC/DCconverter. | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Nch30V10APowerMOSFET | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Nch30V10APowerMOSFET | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
4VDriveNchMOSFET 4VDriveNchMOSFET Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallSurfaceMountPackage(SOP8). Application Switching | ROHMRohm 罗姆罗姆半导体集团 | ROHM |
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