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HM100-HM86D-4100E

4th Gen Intel짰 CoreTM Mini-ITX

文件:415.3 Kbytes 页数:2 Pages

GSR

HM100-HM86D-4102E

4th Gen Intel짰 CoreTM Mini-ITX

文件:415.3 Kbytes 页数:2 Pages

GSR

HM100-HM86D-4402E

4th Gen Intel짰 CoreTM Mini-ITX

文件:415.3 Kbytes 页数:2 Pages

GSR

HM100N02

丝印:HM100N02;Package:TO-220-3L;High density cell design for ultra low Rdson

文件:778.92 Kbytes 页数:6 Pages

HMSEMI

华之美半导体

HM100N02K

丝印:HM100N02K;Package:TO-252-2L;High density cell design for ultra low Rdson

文件:550.6 Kbytes 页数:6 Pages

HMSEMI

华之美半导体

HM100N03

丝印:HM100N03;Package:TO-220;N-Channel Enhancement Mode Power MOSFET

文件:710.75 Kbytes 页数:7 Pages

HMSEMI

华之美半导体

HM100N03D

丝印:HM100N03D;Package:DFN5X6-8L;High density cell design for ultra low Rdson

文件:435.02 Kbytes 页数:6 Pages

HMSEMI

华之美半导体

HM100N06F

丝印:HM100N06F;Package:TO-220F;N-Channel Enhancement Mode Power MOSFET

文件:433.03 Kbytes 页数:6 Pages

HMSEMI

华之美半导体

HM100N07F

N-Channel Enhancement Mode Power MOSFET

文件:542.09 Kbytes 页数:6 Pages

HMSEMI

华之美半导体

HM100N15A

丝印:HM100N15A;Package:TO-220-3L;N-Channel Enhancement Mode Power MOSFET

文件:603.02 Kbytes 页数:7 Pages

HMSEMI

华之美半导体

技术参数

  • 封装(Package):

    TO-220

  • 沟道(Polarity):

    N沟道

  • VDS(Max)BVDSS(V):

    20.00V

  • ID(Max)ID(A):

    100.00A

  • IDM:

    350.00A

  • VTH(Typ):

    0.65V

  • VGS:

    12.00V

  • RDS(ON)@-10VTyp(mΩ):

    4.50mΩ

  • RDS(ON)@-4.5VTyp(mΩ):

    6.50mΩ

  • RDS(ON)@-2.5VTyp(mΩ):

    0.00mΩ

  • 直接替代型号(compatible):

    AOD424/NTD100N02/MTD100N02/FU100N02/SUD100N02/IRFR3704Z/IRFR3711Z/IRLR6225

供应商型号品牌批号封装库存备注价格
HIT
06+
原厂原装
4240
只做全新原装真实现货供应
询价
HITACHI
25+
2650
原装优势!绝对公司现货
询价
HIT
23+
65480
询价
FOXCONN
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
HM
23+
TO-252
50000
全新原装正品现货,支持订货
询价
HM
2022+
TO-252
35633
原厂代理 终端免费提供样品
询价
HMSEMI
23+
TO220F
62388
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
HM
23+
TO-252
6800
专注配单,只做原装进口现货
询价
HM
24+
TO-252
60000
询价
NK/南科功率
2025+
SOT23-6
986966
国产
询价
更多HM100供应商 更新时间2026-1-27 17:23:00