1024 x 1 CMOS RAM

Description The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：220.99 Kbytes 页数：9 Pages

Intersil

1024 x 1 CMOS RAM

Description The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：220.99 Kbytes 页数：9 Pages

Intersil

1024 x 1 CMOS RAM

Description The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：220.99 Kbytes 页数：9 Pages

Intersil

16K x 1 Asynchronous CMOS Static RAM

Description The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle times and ease of use. The HM-65262/883 is available in both JEDEC Standard 20 pin, 0.300 inch w

文件：177.42 Kbytes 页数：10 Pages

Intersil

16K x 1 Asynchronous CMOS Static RAM

Description The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle times and ease of use. The HM-65262 is available in both JEDEC standard 20 pin, 0.300 inch wide CE

文件：41.65 Kbytes 页数：7 Pages

Intersil

16K x 1 Asynchronous CMOS Static RAM

Description The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle times and ease of use. The HM-65262 is available in both JEDEC standard 20 pin, 0.300 inch wide CE

文件：41.65 Kbytes 页数：7 Pages

Intersil

16K x 1 Asynchronous CMOS Static RAM

Description The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle times and ease of use. The HM-65262/883 is available in both JEDEC Standard 20 pin, 0.300 inch w

文件：177.42 Kbytes 页数：10 Pages

Intersil

256 x 4 CMOS RAM

Description The HM-6551 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • Lo

文件：116.03 Kbytes 页数：9 Pages

Intersil

256 x 4 CMOS RAM

Description The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • This Circuit is Processed in Accordance to MIL-STD-883 and i

文件：143.78 Kbytes 页数：9 Pages

Intersil

256 x 4 CMOS RAM

Description The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • This Circuit is Processed in Accordance to MIL-STD-883 and i

文件：143.78 Kbytes 页数：9 Pages

Intersil